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Comparison of Theoretical Stopping Powers and Application to the Range Calculation for Bismuth Ions in Si and SiO2

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dc.authorscopusid8221119200
dc.authorscopusid6603209491
dc.contributor.authorGümüş, H.
dc.contributor.authorKabadayi, Ö.
dc.date.accessioned2020-06-21T15:30:51Z
dc.date.available2020-06-21T15:30:51Z
dc.date.issued2005
dc.departmentOndokuz Mayıs Üniversitesien_US
dc.department-temp[Gümüş] Hasan, Department of Physics, Ondokuz Mayis Üniversitesi, Samsun, Turkey; [Kabadayi] Önder, Department of Physics, Ondokuz Mayis Üniversitesi, Samsun, Turkeyen_US
dc.description.abstractThe results are presented here of random stopping powers and ranges for bismuth ions in both amorphous silicon and silicon dioxide for various theoretical electronic stopping power formulas including those of Montenegro et al. (MCV), Öztürk et al. (OWA), Wang and He (WH), and Gümüş and Köksal (GK). The results were compared with predictions using the readily available SRIM2003 Monte-Carlo code. The calculated results of stopping power using the Gümüş and Köksal formulas are found to be in good agreement with SRIM03 results, and closer in agreement than MCV, OWA and WH except for the maximum of stopping power. Range calculations were performed applying each of these formulae to find the optimum formula for application to range calculation procedures developed in previous work and also compared with SRIM2003. We found that the calculated results of ranges and lateral range straggling of bismuth ions in Si and SiO<inf>2</inf> are not significantly affected by the variations in stopping power formulas and are in good agreement with experimental data, PRAL and SRIM predictions. © 2005 Elsevier Ltd. All rights reserved.en_US
dc.identifier.doi10.1016/j.vacuum.2005.03.003
dc.identifier.endpage162en_US
dc.identifier.isbn9780080325552
dc.identifier.isbn0080305539
dc.identifier.isbn0080035679
dc.identifier.isbn0080311504
dc.identifier.isbn0080325556
dc.identifier.isbn9780080311500
dc.identifier.isbn0080299997
dc.identifier.isbn0080293301
dc.identifier.isbn0080299938
dc.identifier.issn1879-2715
dc.identifier.scopus2-s2.0-22644440218
dc.identifier.scopusqualityQ1
dc.identifier.startpage155en_US
dc.identifier.urihttps://doi.org/10.1016/j.vacuum.2005.03.003
dc.identifier.volume79en_US
dc.identifier.wosWOS:000231083600008
dc.identifier.wosqualityQ2
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.relation.ispartofVacuumen_US
dc.relation.journalVacuumen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectIon Implantationen_US
dc.subjectIon Rangesen_US
dc.subjectSiliconen_US
dc.subjectSilicon Dioxideen_US
dc.subjectStopping Poweren_US
dc.titleComparison of Theoretical Stopping Powers and Application to the Range Calculation for Bismuth Ions in Si and SiO2en_US
dc.typeArticleen_US
dspace.entity.typePublication

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