Comparison of Theoretical Stopping Powers and Application to the Range Calculation for Bismuth Ions in Si and SiO2

Abstract

The results are presented here of random stopping powers and ranges for bismuth ions in both amorphous silicon and silicon dioxide for various theoretical electronic stopping power formulas including those of Montenegro et al. (MCV), Öztürk et al. (OWA), Wang and He (WH), and Gümüş and Köksal (GK). The results were compared with predictions using the readily available SRIM2003 Monte-Carlo code. The calculated results of stopping power using the Gümüş and Köksal formulas are found to be in good agreement with SRIM03 results, and closer in agreement than MCV, OWA and WH except for the maximum of stopping power. Range calculations were performed applying each of these formulae to find the optimum formula for application to range calculation procedures developed in previous work and also compared with SRIM2003. We found that the calculated results of ranges and lateral range straggling of bismuth ions in Si and SiO<inf>2</inf> are not significantly affected by the variations in stopping power formulas and are in good agreement with experimental data, PRAL and SRIM predictions. © 2005 Elsevier Ltd. All rights reserved.