Publication:
Electrical Characterizations of Schottky Diodes on ITO Modified by Aromatic SAMs

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dc.authorscopusid6603391637
dc.authorscopusid55926032200
dc.authorscopusid37007132600
dc.authorscopusid26655262600
dc.authorscopusid58760065000
dc.authorscopusid55601581900
dc.authorscopusid55601581900
dc.contributor.authorHavare, A.K.
dc.contributor.authorOkur, S.
dc.contributor.authorYaǧmurcukardeş, N.T.
dc.contributor.authorCan, M.
dc.contributor.authorAydin, H.
dc.contributor.authorSekere, M.
dc.contributor.authorDemiç, S.
dc.date.accessioned2020-06-21T14:06:48Z
dc.date.available2020-06-21T14:06:48Z
dc.date.issued2013
dc.departmentOndokuz Mayıs Üniversitesien_US
dc.department-temp[Havare] Ali Kemal, Faculty of Engineering, Toros Üniversitesi, Mersin, Mersin, Turkey; [Okur] Salih, Faculty of Engineering, Toros Üniversitesi, Mersin, Mersin, Turkey, Graduate Program of Materials Science and Engineering, İzmir Kâtip Çelebi Üniversitesi, Izmir, Turkey; [Yaǧmurcukardeş] Nesli T., Graduate Program of Materials Science and Engineering, İzmir Kâtip Çelebi Üniversitesi, Izmir, Turkey; [Can] Mustafa, Solar Energy Institute, Ege Üniversitesi, Izmir, Turkey; [Aydin] Hasan, Faculty of Science, Material Science and Engineering, Izmir Yüksek Teknoloji Enstitüsü, Izmir, Turkey; [Sekere] M., Department of Physics, Ondokuz Mayis Üniversitesi, Samsun, Turkey; [Demiç] Şerafettin, Graduate Program of Materials Science and Engineering, İzmir Kâtip Çelebi Üniversitesi, Izmir, Turkeyen_US
dc.description.abstractIn order to understand the electronic properties of the organic Schottky diode, ITO/TPD/Al and ITO/SAM/ TPD/Al organic Schottky devices were fabricated to obtain currentffvoltage characteristics. From the slopes and y-axis intercepts of the plots, the values of the ideality factor, barrier heights of the ITO/SAM/TPD/Al diode were determined as 2.03 and 0.56 eV, respectively. The surface characterizations of modified and unmodified ITO were performed via atomic force microscopy.en_US
dc.identifier.doi10.12693/APhysPolA.123.456
dc.identifier.endpage458en_US
dc.identifier.issn0587-4246
dc.identifier.issue2en_US
dc.identifier.scopus2-s2.0-84874068971
dc.identifier.scopusqualityQ3
dc.identifier.startpage456en_US
dc.identifier.urihttps://doi.org/10.12693/APhysPolA.123.456
dc.identifier.volume123en_US
dc.identifier.wosWOS:000317541600099
dc.identifier.wosqualityQ4
dc.language.isoenen_US
dc.publisherPolish Acad Sciences Inst Physicsen_US
dc.relation.ispartofActa Physica Polonica Aen_US
dc.relation.journalActa Physica Polonica Aen_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.titleElectrical Characterizations of Schottky Diodes on ITO Modified by Aromatic SAMsen_US
dc.typeConference Objecten_US
dspace.entity.typePublication

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