Publication: Electrical Characterizations of Schottky Diodes on ITO Modified by Aromatic SAMs
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Abstract
In order to understand the electronic properties of the organic Schottky diode, ITO/TPD/Al and ITO/SAM/ TPD/Al organic Schottky devices were fabricated to obtain currentffvoltage characteristics. From the slopes and y-axis intercepts of the plots, the values of the ideality factor, barrier heights of the ITO/SAM/TPD/Al diode were determined as 2.03 and 0.56 eV, respectively. The surface characterizations of modified and unmodified ITO were performed via atomic force microscopy.
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WoS Q
Q4
Scopus Q
Q3
Source
Acta Physica Polonica A
Volume
123
Issue
2
Start Page
456
End Page
458