| dc.contributor.author | Havare, A. K. | |
| dc.contributor.author | Okur, S. | |
| dc.contributor.author | Yagmurcukardes, N. T. | |
| dc.contributor.author | Can, M. | |
| dc.contributor.author | Aydin, H. | |
| dc.contributor.author | Seker, M. | |
| dc.contributor.author | Demic, S. | |
| dc.date.accessioned | 2020-06-21T14:06:48Z | |
| dc.date.available | 2020-06-21T14:06:48Z | |
| dc.date.issued | 2013 | |
| dc.identifier.issn | 0587-4246 | |
| dc.identifier.uri | https://doi.org/10.12693/APhysPolA.123.456 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12712/16000 | |
| dc.description | 2nd International Congress on Advances in Applied Physics and Materials Science (APMAS) -- APR 26-29, 2012 -- Antalya, TURKEY | en_US |
| dc.description | CAN, Mustafa/0000-0002-1749-8293; Aydin, Hasan/0000-0003-1622-2436; Havare, Ali Kemal/0000-0002-9272-9223; Okur, Salih/0000-0001-5159-7191 | en_US |
| dc.description | WOS: 000317541600099 | en_US |
| dc.description.abstract | In order to understand the electronic properties of the organic Schottky diode, ITO/TPD/Aland ITO/SAM/TPD/Al organic Schottky devices were fabricated to obtain current voltage characteristics. From the slopes and y-axis intercepts of the plots, the values of the ideality factor, barrier heights of the ITO/SAM/TPD/Al diode were determined as 2.03 and 0.56 eV, respectively. The surface characterizations of modified and unmodified ITO were performed via atomic force microscopy. DOT: 10.12693/APhysPolA.123.456 | en_US |
| dc.description.sponsorship | Gebze Inst Technol, Izmir Katip Celebi Univ, Istanbul Kultur Univ, Doga Nanobiotech Inc, Terra Lab, Inc, LOT Oriel Grp Europe, Redoks Inc, Edinburgh Instruments, Anamed & Analitik Grp, NanoMagnet Instruments Ltd, Maney Publishing | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | Polish Acad Sciences Inst Physics | en_US |
| dc.relation.isversionof | 10.12693/APhysPolA.123.456 | en_US |
| dc.rights | info:eu-repo/semantics/openAccess | en_US |
| dc.title | Electrical Characterizations of Schottky Diodes on ITO Modified by Aromatic SAMs | en_US |
| dc.type | conferenceObject | en_US |
| dc.contributor.department | OMÜ | en_US |
| dc.identifier.volume | 123 | en_US |
| dc.identifier.issue | 2 | en_US |
| dc.identifier.startpage | 456 | en_US |
| dc.identifier.endpage | 458 | en_US |
| dc.relation.journal | Acta Physica Polonica A | en_US |
| dc.relation.publicationcategory | Konferans Öğesi - Uluslararası - Kurum Öğretim Elemanı | en_US |
