Electrical Characterizations of Schottky Diodes on ITO Modified by Aromatic SAMs
Özet
In order to understand the electronic properties of the organic Schottky diode, ITO/TPD/Aland ITO/SAM/TPD/Al organic Schottky devices were fabricated to obtain current voltage characteristics. From the slopes and y-axis intercepts of the plots, the values of the ideality factor, barrier heights of the ITO/SAM/TPD/Al diode were determined as 2.03 and 0.56 eV, respectively. The surface characterizations of modified and unmodified ITO were performed via atomic force microscopy. DOT: 10.12693/APhysPolA.123.456
