Yazar "Kabadayi, O" için listeleme
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An algorithm for the calculation of heavy ion ranges in SiO2
Kabadayi, O; Gumus, H (Inst Nuclear Chemistry Technology, 2003)The heavy ion ranges in amorphous SiO2 have been calculated by using a technique based on solution of first order ODE's. Br, Au, Hg, Bi, projectiles have been chosen as incident ion. Since the target is assumed to be ... -
Calculation of average projected range and range straggling of charged particles in solids
Kabadayi, O; Gumus, H (Pergamon-Elsevier Science Ltd, 2001)Based on the KRAL equations (Ashworth et al., 1991. J. Phys. D 24, 1376-1380), which take into account second order energy loss moments, projected ranges and range moments of ions in mono-atomic targets were calculated. ... -
Calculation of the range of medium-energy F, Cs, and Ga ions in silicon carbide
Kabadayi, O (Canadian Science Publishing, 2004)We present simulation results for the implantation of fast F, Cs, and Ga ions into amorphous SiC using a technique that we developed in a previous work.Bragg's rule is employed to calculate the electronic and nuclear ... -
The channeled stopping powers of Boron ions and range calculations in Si
Kabadayi, O (Inst Physics Acad Sci Czech Republic, 2004)An analytical fitting expression is obtained for the channeled stopping power of B ions in crystalline silicon. Ions incident in the Si (100) direction at energies from 50 keV/amu to 900 keV/amu are considered. The mean ... -
Comparison of theoretical stopping powers and application to the range calculation for bismuth ions in Si and SiO2
Gumus, H; Kabadayi, O (Pergamon-Elsevier Science Ltd, 2005)The results are presented here of random stopping powers and ranges for bismuth ions in both amorphous silicon and silicon dioxide for various theoretical electronic stopping power formulas including those of Montenegro ... -
Range and longitudinal range straggling with various stopping power formulations for oxygen ions in Si and SiO2
Kabadayi, O; Gumus, H (Wiley-V C H Verlag Gmbh, 2005)The results on comparison of different energy-loss formulations as well as calculations of the range and range straggling have been presented for the ion-target system where oxygen ions are incident on amorphous silicon ... -
Ranges of channelled keV B ions in Si crystals with impact parameter dependent stopping power
Kabadayi, O (Iop Publishing Ltd, 2004)In this study we calculated channelled ion ranges of boron ions by using an impact parameter dependent stopping power model. Impact parameter dependent stopping powers for boron ions penetrating into Si (100) are investigated ... -
Simulation of channelled ion ranges in crystalline silicon
Kabadayi, O; Gumus, H (Pergamon-Elsevier Science Ltd, 2004)We present results from a channelled ion range simulation model based on separation of ion trajectories into three different categories known as random, channelled, and well-channelled. We present this for boron projectiles ...